EE6361-Advanced Topics in VLSI Class Quiz

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3T Micro Sense Amplifier

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Q1. An eDRAM has a cell capacitance of 20fF and an access transistor with 600mV threshold voltage (Vtn ), a W/L = 2 and μnCox = 160 μA/V^ 2. The maximum variation in Vtn is ±45mV . If the array voltage VBLH = 900mV , answer the following. What is the word-line(WL) high voltage (VPP )? Express your answer in Volts

Q2. When writing a logic 1, if the WL is instantaneously turned ON what region is the access device in and why? You may assume that the BL has been charged to VBLH before turning ON the WL.

Cut off

Linear

Saturation

Velocity saturation

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Q3. Derive an expression for the nominal write time τ (Vf ) :- defined as the time required to charge the cell to a final voltage Vf with the access transistor having a nominal Vtn. Calculate the write time when Vf= 800mV and VPP is further increased by 55 mV from problem 1

Q4. The write time when Vf= 900mV

Q5. It is possible to write a complete VBLH voltage into the cell if VPP is increased accordingly

True

False

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Q6. In micro sense amp the threshold voltage of the RH transistor is 250mV. The LBL capacitance is 4fF for 32 WLs connected to the BL. Assuming that the cell capacitance is 20fF and array voltage is 1V, if now the number of WLs made 4X

The transfer ratio is too low and hence will not function

The transfer ratio is high enough and it will function at high speed

It will still function but at very slow speeds

Functionality is independent of transfer ratio

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Q7. In a 3T micro sense amp, in recharge condition

Leakage through PCW0 and FB are concerns

Leakage through FB and RH are concerns

Leakage is not a concern

Leakage through PCW0 and FB are concerns

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Q8. In a 3T micro sense amp, in order to make the read operation faster the threshold voltage of

RH should be increased

RH should be decreased

PCW0 should be increased

PCW0 should be decreased

Clear selection

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